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在具有面内栅极下电极的三极管结构中使用高度结晶单壁碳纳米管简单平面场电子发射器

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发表于 2019-1-28 14:39:58 | 显示全部楼层 |阅读模式
Simple planar field-electron emitter using highly crystalline single-walled carbon nanotubes in a triode structure with in-plane under-gate electrode
在具有面内栅极下电极的三极管结构中使用高度结晶的单壁碳纳米管的简单的平面场电子发射器
Journal of Vacuum Science & Technology B 37, 021201 (2019);

https://doi.org/10.1116/1.5066256

Shoichi Kumon1,2 and Norihiro Shimoi2,a)
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1DOWA Holdings Ltd Co., 14-1 Sotokanda 4-Chome, Chiyoda-ku, Tokyo 101-0021, Japan
2Graduate School of Environmental Studies, Tohoku University, 6-6-20 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
a)Electronic mail: norihiro.shimoi.c8@tohoku.ac.jp

ABSTRACT
摘要

The authors investigated the field-electron emission characteristics of a planar field-emission (FE) electron source with a planar conductive layer as a gate electrode embedded under a cathode composed of highly crystalline single-walled carbon nanotubes (hc-SWCNTs) as an emitter. They designed a flat-panel electron emission device that could control electron emission switching arbitrarily, and the device stably emitted electrons on the flat panel. After they assembled the FE electronic device using a wet chemical process, they attained low power consumption and high luminance efficiency. These results show that the application of hc-SWCNTs effectively conserves energy in FE electron sources. The fabrication of FE electron sources and other devices with ultralow power consumption, along with applications that utilize such devices, is expected in the future.

        作者研究了平面场发射(FE)电子源的场电子发射特性,其中平面导电层作为栅电极嵌入在阴极下,后者由作为发射极的高结晶单壁碳纳米管(hc-SWCNTs)组成。他们设计了一种可以任意控制电子发射开关的平板电子发射器件,该器件在平板上稳定地发射电子。在他们使用湿化学工艺组装了FE电子器件之后,他们获得了低功耗和高发光效率器件特性。这些结果表明,hc-SWCNTs的应用有效地节省了FE电子源中的能量。制造FE电子源和其它具有超低功耗的器件,以及使用这些器件的各种应用在将来是可以预期的。


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