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通过扫描透射电镜和能量色散X射线光谱研究紫外光固化薄膜与三甲基铝的有机/无机杂化

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发表于 2018-11-22 12:57:16 | 显示全部楼层 |阅读模式
Visualization of organic/inorganic hybridization of UV-cured films with trimethylaluminum by scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

通过扫描透射电镜和能量色散X射线光谱研究紫外光固化薄膜与三甲基铝的有机/无机杂化的可视化处理

Journal of Vacuum Science & Technology B 36, 06JF02 (2018);

https://doi.org/10.1116/1.5047822

Masaru Nakagawaa), Takuya Uehara, Yuki Ozaki, Takahiro Nakamura, and Shunya Ito
Hide Affiliations
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan
a)Electronic mail: masaru.nakagawa.c5@tohoku.ac.jp

ABSTRACT

The organic/inorganic hybridization of photopolymerized resist films for ultraviolet nanoimprint lithography (UV-NIL) through chemical vapor modifications of atomic layer deposition (ALD), sequential infiltration synthesis (SIS), and saturated vapor infiltration (SVI) with an inorganic precursor of trimethylaluminum (TMA) and an oxidant of water was investigated.
The hybridization of the bisphenol A-based polymethacrylate resist films was compared between resin-A comprising a monomer with hydroxy groups and resin-B comprising another monomer without hydroxy groups.

The elemental depth profiles by scanning transmission electron microscopy and energy dispersive x-ray spectroscopy revealed the following three things.

ALD and SIS caused the hybridization of the organic resist films with inorganic alumina near the film surfaces, while SVI caused the hybridization of the resist films entirely.

The hydroxy-free resin-B physically adsorbed and chemically fixed more TMA molecules than the hydroxy-containing resin-A.

Although SIS progressed the entire hybridization of the resist films, different behaviors of segregation of alumina between the hydroxy-containing resin-A and hydroxy-free resin-B films were confirmed near the film surface, inside, and interface with a silicon substrate.

The organic/inorganic hybridization enabled the tuning of the etching rate of the NIL resist masks with a thickness of no thicker than 20 nm in oxygen reactive ion etching often used for the removal of residual layers from imprint patterns in UV-NIL processes.


        本文通过原子层沉积(ALD)的化学气相修饰,顺序渗透合成(SIS)和饱和蒸汽渗透(SVI)对用于紫外纳米压印光刻(UV-NIL)的光致聚合抗蚀剂膜与三甲基铝(TMA)的无机前驱体及水的氧化剂的有机/无机杂化进行了研究。对双酚A-型聚甲基丙烯酸酯抗蚀剂膜的杂化作了比较,比较是在包含带有羟基的单体的树脂-A和包含不带有羟基的另一单体的树脂-B之间进行的。通过扫描透射电镜和能量色散x射线光谱的元素深度分布的分析,揭示了以下三项结果。ALD和SIS引起有机抗蚀剂膜与膜表面附近的无机氧化铝的杂化,而SVI则引起整个抗蚀剂膜的杂化。与含羟基的树脂-A相比,无羟基树脂-B物理上吸附了,以及化学上固定了更多的TMA分子。尽管SIS进行了抗蚀剂膜的整个杂化,但是在膜表面,内部以及与硅基板的界面附近确认了含羟基的树脂-A和无羟基的树脂-B膜之间的氧化铝偏析的不同行为。有机/无机的杂化使得能够在氧反应离子蚀刻中调整NIL抗蚀剂掩模的蚀刻速率,其厚度不超过20nm,这通常用于从UV-NIL工艺中的压印图案中去除残留层。

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