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评论文章:氧化物半导体薄膜晶体管的原子层沉积:研究和开发的进展

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发表于 2018-11-8 10:09:14 | 显示全部楼层 |阅读模式
Review Article: Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development
评论文章:氧化物半导体薄膜晶体管的原子层沉积:研究和开发的进展
Journal of Vacuum Science & Technology A 36, 060801 (2018);
Jiazhen Sheng1, Jung-Hoon Lee1, Wan-Ho Choi1, TaeHyun Hong1, MinJung Kim2, and Jin-Seong Park1,2,a)

ABSTRACT
摘要

This article is a review of recent research and development advances in oxide thin film transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process is remarkable as it offers accurate control of film thickness and composition as well as the ability to achieve excellent uniformity over large areas at relatively low temperatures. Firstly, an introduction to n-type oxide TFTs is provided with a focus on the development of active-layer material combinations from binary oxide active layers, like zinc oxide and indium oxide, to ternary and quaternary oxide active layers formed by doping with elements such as gallium or tin to achieve high mobility and high device stability for TFTs. Secondly, ALD p-type channel oxide TFTs are also introduced, which are required for the realization of many types of low-power circuits, such as complementary metal oxide semiconductor devices.



        本文回顾了通过原子层沉积(ALD)工艺制造的氧化物薄膜晶体管(TFT)的最新研究和发展进展。ALD工艺非常卓越,因为它可以精确控制薄膜厚度和成分,并且能够在相对较低的温度下在大面积上实现出色的均匀性。首先,介绍n-型氧化物TFT,重点介绍从氧化锌和氧化铟等二元氧化物活性层,再到加入掺杂元素镓或锡等形成的三元和四元氧化物活性层的材料组合的开发,以便实现TFT的高迁移率和高器件稳定性。其次,还介绍了ALD  p-型沟道氧化物TFT,它们是实现许多类型的低功率电路,例如互补金属氧化物半导体等器件所必需的。

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