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碳掺杂对In-Si-O薄膜晶体管的阈值电压和迁移率的影响

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发表于 2018-10-25 08:38:59 | 显示全部楼层 |阅读模式
Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors
碳掺杂对In-Si-O薄膜晶体管的阈值电压和迁移率的影响
Journal of Vacuum Science & Technology B 36, 061206 (2018);
https://doi.org/10.1116/1.5039665

Kazunori Kurishima1,2,a), Toshihide Nabatame2,b), Nobuhiko Mitoma2, Takio Kizu2, Shinya Aikawa2, Kazuhito Tsukagoshi2, Akihiko Ohi2, Toyohiro Chikyow2, and Atsushi Ogura1
Hide Affiliations
1Department of Electronics and Bioinformatics, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan
2National Institute for Materials Science (WPI-MANA), International Center for Materials Nanoarchitectonics, 1-1 Namiki, Tsukuba 305-0044,  Japan
a)Electronic mail: kuri1109@meiji.ac.jp
b)Electronic mail: NABATAME.Toshihide@nims.go.jp

ABSTRACT
摘要

In this study, a co-sputtering method with In2O3 and SiC targets was used to fabricate carbon-doped In-Si-O (In1-xSixO1-yCy) as the channel material for oxide thin-film transistors (TFTs). Three types of In1-xSixO1-yCy channels, namely, In0.88Si0.12O0.99C0.01 (Si0.12C0.01), In0.76Si0.24O0.99C0.01 (Si0.24C0.01), and In0.60Si0.40O0.98C0.02 (Si0.40C0.02), were prepared. After annealing at 300 °C, the Si0.24C0.01 and Si0.40C0.02 films retained an amorphous structure, while the Si0.12C0.01 films exhibited a body-centered-cubic structure. However, all the In1-xSixO1-yCy films maintained a smooth surface with a root-mean-square roughness of approximately 0.28 nm, despite structural differences.  Results showed that the conductivities of all the In1-xSixO1-yCyfilms were not sensitive to the O2 partial pressure during sputtering, indicating that In1-xSixO1-yCy films exhibit more stable electrical conductivity than other InOx-based oxides. The field-effect mobility (μFE) with respect to the Si concentration of In1-xSixO1-yCy and In1-xSixO TFTs showed very similar behavior. In contrast, the threshold voltage (Vth) behavior of the two types varied dramatically, with the In1-xSixO TFTs Vth value increasing drastically from −57.7 to 9.7 V with increasing Si concentration, and the Vth of In1-xSixO1-yCy TFTs increasing only gradually from −9.2 to 2.4 V. This indicates that incorporated carbon has a significant effect on Vth at a low Si concentration due to strong C—O bond formation. The highest bond dissociative energy occurs between O and C atoms in the In1-xSixO1-yCy channel. The amount of oxygen vacancy in Si0.12C0.01, Si0.24C0.01, and Si0.40C0.02 was 18.9%, 13.3%, and 12.9%, respectively. As a result, the Si0.12C0.01 TFT exhibited superior transistor properties of Vth = −9.2 V while maintaining a μFE of 32.4 cm2/Vs. Therefore, an In1-xSixO1-yCy film is significantly advantageous as a channel material for oxide TFTs given that it can result in mobility exceeding 30 cm2/Vs.


        在本研究中,使用In2O3 和 SiC靶的共溅射方法来制造碳掺杂的In-Si-O (In1-xSixO1-yCy)作为氧化物薄膜晶体管(TFT)的沟道材料。制备了三种类型的In1-xSixO1-yCy沟道,即In0.88Si0.12O0.99C0.01 (Si0.12C0.01),In0.76Si0.24O0.99C0.01 (Si0.24C0.01)和In0.60Si0.40O0.98C0.02 (Si0.40C0.02)。在300℃退火后,Si0.24C0.01 和 Si0.40C0.02薄膜保持非晶结构,而Si0.12C0.01薄膜表现出体心立方结构。然而,尽管存在结构差异,但所有的In1-xSixO1-yCy薄膜保持光滑表面,均方根粗糙度约为0.28nm。结果表明,所有In1-xSixO1-yCy薄膜的电导率对溅射过程中的O2分压不敏感,表明In1-xSixO1-yCy薄膜比其他基于InOx的氧化物表现出更稳定的电导率。相对于In1-xSixO1-yCy 和 In1-xSixO TFTs的Si浓度,其场效应迁移率 (μFE) 显示出非常相似的行为。相比之下,两种类型的阈值电压(Vth)行为变化很大,随着Si浓度的增加,In1-xSixO TFTs 的Vth值从-57.7急剧增加到9.7V,而In1-xSixO1-yCy TFTs的Vth仅从-9.2到2.4 V逐渐增加。这表明,由于强C-O键的形成,掺入的碳在低Si浓度下对Vth具有显着影响。最高的键解离能发生在In1-xSixO1-yCy沟道中的O和C原子之间。在Si0.12C0.01、Si0.24C0.01, 和 Si0.40C0.02中的氧空位量分别为18.9%、13.3% 和12.9%。本研究结果是,Si0.12C0.01 TFT表现出Vth = −9.2 V优异的晶体管特性,同时保持32.4 cm2/Vs的μFE值。因此,In1-xSixO1-yCy薄膜作为氧化物TFTs的沟道材料是非常有利的,因为它可以达到超过32.4 cm2/Vs的迁移率。

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