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氮化物缓冲层对氮化铌超导特性的影响

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发表于 2018-9-25 13:57:16 | 显示全部楼层 |阅读模式
Influence of nitride buffer layers on superconducting properties of niobium nitride
氮化物缓冲层对氮化铌超导特性的影响
Journal of Vacuum Science & Technology A 36, 061502 (2018);

https://doi.org/10.1116/1.5044276

John H. Goldsmith1,2,a), Ricky Gibson2,3, Tim Cooper1,2, Thaddeus J. Asel4,5, Shin Mou5, Dave C. Look1,2,6, John S. Derov2, and Joshua R. Hendrickson2
1KBRWyle, 2700 Indian Ripple Rd., Dayton, Ohio 45440
2Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson AFB, Ohio 45433
3University of Dayton Research Institute, 300 College Park, Dayton, Ohio 45469
4UES, 4401 Dayton Xenia Rd., Dayton, Ohio 45432
5Air Force Research Laboratory, Materials and Manufacturing Directorate, 2179 12th St., Wright-Patterson AFB, Ohio 45433
6Semiconductor Research Center, Wright State University, 3640 Colonel Glenn Hwy., Dayton, Ohio 45435
a)Electronic mail: jh.goldsmith@gmail.com

ABSTRACT
摘要

Niobium nitride thin films were deposited using reactive magnetron sputtering simultaneously on sapphire substrates with TiN, VN, and AlN buffer layers. Deposition temperature was varied from 400 to 840 °C. It was found that the crystal structure, surface roughness, and transition temperatures of the resulting NbN films depend strongly on both the growth temperature and the type of the buffer layer. The use of VN and TiN buffer layers for growing NbN at 400 °C improved transition temperatures compared to NbN grown at 840 °C on sapphire. While increasing the temperature improved the superconducting performance of films grown directly on sapphire, it caused hexagonal δ′-NbN and ε-NbN phases to emerge on the buffered films. A highly oriented hexagonal ε-NbN film was achieved by using a TiN buffer and an 840 °C deposition temperature. The ability to deposit high performance NbN at a lower temperature will improve and simplify the fabrication of advanced superconducting devices such as superconducting single photon detectors.




        使用反应磁控溅射在具有TiN,VN和AlN缓冲层的蓝宝石衬底上同时沉积氮化铌薄膜。沉积温度在400至840℃之间变化。研究发现,所得的NbN薄膜的晶体结构,表面粗糙度和转变温度强烈地取决于生长温度和缓冲层的类型。与在840 °C下在蓝宝石上生长的NbN相比,在400 °C下使用VN和TiN作为缓冲层生长的NbN的转变温度提高了。虽然提高温度改善了直接在蓝宝石上生长的薄膜的超导性能,但它导致了六方δ′-NbN 和ε-NbN相出现在缓冲薄膜上。通过使用TiN缓冲层和840 °C的沉积温度实现了高度取向的六方ε-NbN薄膜。在较低温度下沉积高性能NbN的能力将改善和简化诸如超导单光子探测器这样的先进超导器件的制造。



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