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Ag/SiNx/Si器件中存储器和阈值切换的并发事件

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发表于 2018-8-23 14:12:45 | 显示全部楼层 |阅读模式
Concurrent events of memory and threshold switching in Ag/SiNx/Si devices
Ag/SiNx/Si器件中存储器和阈值切换的并发事件
Journal of Vacuum Science & Technology B 36, 051203 (2018);
https://doi.org/10.1116/1.5034058

Sungjun Kim1, Min-Hwi Kim2, Tae-Hyeon Kim2, Ying-Chen Chen3, Yao-Feng Chang3, Muhammad Ismail1, Yoon Kim4, Kyung-Chang Ryoo5,a), and Byung-Gook Park2,b)
Hide Affiliations
1School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Republic of Korea
2Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, South Korea
3Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758
4Nanoconvergence Technology Division, Department of Nanoenergy Engineering, Pusan National University, Busan 46241,Republic of Korea
5Memory Division, Application Engineering Team, Samsung Electronics Co. Ltd., Gyeonggi-do 18448, South Korea
a)Electronic mail: kiyan42@snu.ac.kr
b)Electronic mail: bgpark@snu.ac.kr

ABSTRACT
摘要

In this work, the simultaneous detection of threshold switching and bipolar memory switching in Ag/SiNx/p++-Si devices is investigated. In the DC sweep mode, threshold switching is observed with low compliance current limit (CCL) of 1 μA while memory switching is dominant when high CCL (1 mA) is applied. It is found that in the pulse switching mode, pulse amplitude is an important factor in determining the nature of switching. It has been proven that the strength of the Ag filament formed in the SiNx determines the nonvolatile property of the switching. The undirectional threshold switching behavior in low currents of Ag/SiNx/p++-Si devices could be used as a selector for a low-power unipolar memory. Moreover, operating in two modes in one device will provide more flexibility in device design.

        在这项工作中,研究了Ag/SiNx/p++-Si器件中阈值切换和双极存储器切换的同时检测。在DC扫描模式下,在低遵守电流限制(CCL)为1 μA时观察到阈值切换,而当施加高CCL(1 mA)时,存储器切换占主导地位。发现在脉冲切换模式中,脉冲幅度是决定切换性质的重要因素。已经证明,在SiNx中形成的Ag灯丝的强度决定了切换的非易失性。Ag/SiNx/p++-Si器件在低电流下的非定向阈值切换行为可用作低-功耗单极存储器的选择器。此外,在一个设备中以两种模式的操作将为器件设计提供更大的灵活性。


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