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磁控溅射和等离子体增强原子层沉积的氮化铝薄膜的力学性能和成分比较

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发表于 2018-8-8 15:52:52 | 显示全部楼层 |阅读模式
Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
磁控溅射和等离子体增强原子层沉积的氮化铝薄膜的力学性能和成分比较
Journal of Vacuum Science & Technology A 36, 051508 (2018);

https://doi.org/10.1116/1.5038856

Perttu Sippola1,a), Alexander Pyymaki Perros1,2, Oili M. E. Ylivaara3, Helena Ronkainen3, Jaakko Julin4,5, Xuwen Liu6, Timo Sajavaara4, Jarkko Etula7, Harri Lipsanen1, and Riikka L. Puurunen3,6
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Perttu Sippola1,a), Alexander Pyymaki Perros1,2, Oili M. E. Ylivaara3, Helena Ronkainen3, Jaakko Julin4,5, Xuwen Liu6, Timo Sajavaara4, Jarkko Etula7, Harri Lipsanen1, and Riikka L. Puurunen3,6
Hide Affiliations
1Department of Electronics and Nanoengineering, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto, Finland
2Nanovate Oy, Tietotie 3, 02150 Espoo, Finland
3VTT Technical Research Center of Finland Ltd., P.O. Box 1000, FI-02044 Espoo, Finland
4Department of Physics, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä, Finland
5Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany
6Department of Chemical and Metallurgical Engineering, Aalto University School of Chemical Engineering, P.O. Box 16100, FI-00076 Aalto, Finland
7Department of Chemistry and Materials Science, Aalto University School of Chemical Engineering, P.O. Box 16100, FI-00076 Aalto, Finland
a)Electronic mail: perttu.sippola@aalto.fi

ABSTRACT
摘要

A comparative study of mechanical properties and elemental and structural composition was made for aluminum nitride thin films deposited with reactive magnetron sputtering and plasma enhanced atomic layer deposition (PEALD). The sputtered films were deposited on Si (100), Mo (110), and Al (111) oriented substrates to study the effect of substrate texture on film properties. For the PEALD trimethylaluminum–ammonia films, the effects of process parameters, such as temperature, bias voltage, and plasma gas (ammonia versus N2/H2), on the AlN properties were studied. All the AlN films had a nominal thickness of 100 nm.

Time-of-flight elastic recoil detection analysis showed the sputtered films to have lower impurity concentration with an Al/N ratio of 0.95, while the Al/N ratio for the PEALD films was 0.81–0.90.

The mass densities were ~3.10 and ~2.70 g/cm3 for sputtered and PEALD AlN, respectively. The sputtered films were found to have higher degrees of preferential crystallinity, whereas the PEALD films had a residual stress ranging from tensile to compressive (846 to −47 MPa), and high plasma bias resulted in compressive films. The adhesion of both films was good on Si, although sputtered films showed more inconsistent critical load behavior. Also, the substrate underneath the sputtered AlN did not withstand high wear forces as with the PEALD AlN. The coefficient of friction was determined to be ~0.2 for both AlN types, and their wear characteristics were almost identical.


        对使用反应磁控溅射和等离子体增强原子层沉积(PEALD)制备的氮化铝薄膜进行了力学性能、元素及结构组成的对比研究。溅射的薄膜沉积在Si (100),Mo (110)和Al (111) 取向的基底上,以研究基底纹理对薄膜性能的影响。对于PEALD三甲基铝 - 氨膜,研究了工艺参数(例如温度、偏压和等离子体气体(氨对N2/H2))对AlN性质的影响。所有AlN膜的标称厚度均为100nm。飞行时间弹性反冲检测分析表明,溅射薄膜的杂质浓度较低,Al / N比为0.95,而PEALD薄膜的Al / N比为0.81-0.90。溅射和PEALD 方法制备的AlN的质量密度分别为 ~ 3.10和 ~ 2.70 g/cm3。发现溅射薄膜具有较高程度的优先结晶度,而PEALD薄膜具有从拉伸到压缩(846至-47MPa)的残余应力,并且高的等离子体偏压会导致压缩性薄膜。尽管溅射薄膜显示出更不一致的临界载荷行为,但两种薄膜在Si上的粘附性都很好。并且,溅射制备的AlN下面的衬底不像PEALD 制备的AlN下面的衬底那样能承受高的磨损力。对于这两种AlN的类型,摩擦系数确定为 ~0.2,并且它们的磨损特性几乎相同。

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