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不同溅射温度下使用磁控溅射生长良好取向的InN纳米点

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发表于 2018-7-18 13:24:47 | 显示全部楼层 |阅读模式
Growth of well-oriented InN nanodots by magnetron sputtering with varying sputtering temperature
不同溅射温度下使用磁控溅射生长良好取向的InN纳米点
Journal of Vacuum Science & Technology B 36, 041204 (2018);

https://doi.org/10.1116/1.5028165

Hui Wang, Yang Zhaoa), Xinzhong Li, Jingjie Li, Ziming Zhang, Shuai Wan, and Weizhao Gu
  School of Physics and Engineering, Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, Henan University of Science and Technology, 263 Kaiyuan Avenue, Luoyang 471003, People's Republic of ChinaFan Yang
  Jilin Provincial Key Laboratory of Architectural Electricity and Comprehensive Energy Saving, School of Electrical Engineering and Computer, Jilin Jianzhu University, Changchun 130118, People's Republic of China
lessHide Affiliations
a)Electronic mail: lwc9442@126.com

ABSTRACT
摘要

Herein, indium nitride nanodots were deposited on sapphire substrates by radio-frequency magnetron sputtering under different sputtering temperatures. The structure and morphology results revealed that the as-grown InN films exhibited a c-axis preferred oriented growth and a well-oriented InN nanodot morphology. The x-ray photoelectron spectra results indicated that the In atoms existed only as combined InN and not in the form of In2O3 in consequence of the fact that the atomic ratio of In/N was approximately 1:1.06. The energy bandgap of the InN nanodots varied from 1.68 to 2.01 eV as the sputtering temperature increased. Moreover, the electrical properties of the InN nanodots were also discussed in detail using Hall effect results

        本文介绍,通过射频磁控溅射在不同的溅射温度下将氮化铟纳米点沉积在蓝宝石衬底上。所得的结构和形态结果表明,生长出来的InN膜表现出c-轴优选的取向生长和良好取向的InN纳米点形态。X-射线光电子能谱结果表明,由于In/N的原子比约为1:1.06,In原子仅以与InN结合形式存在,而不以In2O3的形式存在。随着溅射温度的升高,InN纳米点的能带隙从1.68变化到2.01eV。此外,还借助霍尔效应结果详细讨论了InN纳米点的电学特性。


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