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在关态电应力下AlGaN / GaN金属 - 绝缘体 - 半导体高电子迁移率晶体管的退化

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发表于 2018-7-5 14:59:58 | 显示全部楼层 |阅读模式
Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress
Journal of Vacuum Science & Technology B 36, 042201 (2018);

在关态电应力下AlGaN / GaN金属 - 绝缘体 - 半导体高电子迁移率晶体管的退化

https://doi.org/10.1116/1.5023844

Liang Song
  School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123, People's Republic of China and Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of ChinaKai Fua)
  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of ChinaJie Zhao
  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of China and Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, ChinaGuohao Yu
  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of ChinaRonghui Hao
  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of China and School of Materials Science and Engineering, Nanjing University of Science and Technology, Xiao Ling Wei 200, Nanjing 210094, People's Republic of ChinaYaming Fan and Yong Cai
  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of ChinaBaoshun Zhangb)
  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of China and Suzhou Powerhouse Electronics Co., Ltd., Suzhou 215123, People's Republic of China
more...Hide Affiliations
a)Electronic mail: kfu2009@sinano.ac.cn
b)Electronic mail: bszhang2006@sinano.ac.cn

ABSTRACT
摘要

In this paper, the authors have fabricated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors employing the low-pressure chemical vapor deposition (LPCVD) SiNx as the gate insulator with field plate structure and the long-term degradation was investigated under off-state stress with degradation process monitoring. The gate leakage and drain leakage under off-state electrical stress showed different change rules while the former was expected to be effectively suppressed by LPCVD-SiNx dielectric. The output and transfer characteristics between the stress were obtained periodically to investigate the degradation process. Through the analysis of the degradation of the parameters and the shifts of the Raman spectra, the inverse piezoelectric effect is believed to be the dominant degradation mechanism.


        在本论文中,作者使用低压-化学气相沉积的(LPCVD)SiNx作为具有场板结构的栅极绝缘体制备了AlGaN / GaN金属 - 绝缘体 - 半导体高电子迁移率晶体管,并且在对退化过程的监控下研究了该晶体管的长期退化状态。在关态电应力下的栅极漏电流和漏极漏电流表现出不同的变化规律,而前者预期被LPCVD-SiNx电介质有效地抑制。定期地获取了应力之间的输出和传递特性,以便研究其退化过程。通过对退化参数和拉曼光谱的偏移的分析,认为反压电效应是主要的退化机制。



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