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以MBE生长的AlN作为电介质的高温电容器

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发表于 2018-6-21 10:03:05 | 显示全部楼层 |阅读模式
High temperature capacitors using AlN grown by MBE as the dielectric
Journal of Vacuum Science & Technology B 36, 041202 (2018);

以MBE生长的AlN作为电介质的高温电容器

https://doi.org/10.1116/1.5033931

Pijush K. Ghosh and Mirsaeid Sarollahi
  Electrical Engineering Department, University of Arkansas, Fayetteville, Arkansas 72701Chen Li and Thomas White
  Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701Desalegn T. Debu and Qigeng Yan
  Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701Andrian Kuchuk
  Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701Rahul Kumar
  Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701Satish Shetty
  Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701Gregory J. Salamo
  Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701Morgan E. Warea)
  Electrical Engineering Department, University of Arkansas, Fayetteville, Arkansas 72701

more...Hide Affiliations
a)Electronic mail: meware@uark.edu

ABSTRACT
摘要

The authors present the use of epitaxial AlN as the dielectric in a chip level thin film capacitor for operation at high temperatures and high frequencies. They have performed capacitance measurements up to 600 K. The basic performance is modeled as a simple metal-insulator-semiconductor capacitor, which provides insight into the underlying mechanisms of accumulation, depletion, and inversion. Throughout the tested temperature range, the capacitance is highly stable with only a slight, linear, decrease with temperature. Additionally, at low frequencies, the capacitor exhibits very high capacitance with an expected decrease with increasing frequency.

        作者提出使用外延AlN作为芯片级薄膜电容器中的电介质,以在高温和高频下工作。他们已经完成了在高达600 K的温度下的电容测量. 其基本性能被模拟为一个简单的金属 - 绝缘体 - 半导体电容器,该模型有助于深入了解电容的聚积,消耗和反反转的机制。在整个测试温度范围内,电容极其稳定,只有轻微的随温度的线性下降。另外,在低频时,电容器呈现出非常高的电容,预计随着频率的增加而有所下降。


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