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使用纳米球光刻法制备的锗纳米结构的近红外光吸收的增强

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发表于 2018-6-13 13:29:11 | 显示全部楼层 |阅读模式
Near-infrared light absorption enhancement in Ge nanostructures prepared by nanosphere lithography
使用纳米球光刻法制备的锗纳米结构的近红外光吸收的增强
Journal of Vacuum Science & Technology B 36, 041601 (2018);

https://doi.org/10.1116/1.5029435

Wenyi Shao, Jun Xua), Jiaming Chen, Xiaoxiang Wu, and Kunji Chen
Hide Affiliations
School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing, Jiangsu Province, 210093, China
a)Electronic mail: junxu@nju.edu.cn

ABSTRACT
摘要

Nanosphere lithography technique has been used to get Ge nanostructures for enhancing the optical absorption in the near-infrared light region. It is proved that the morphologies of formed Ge nanostructures can be well controlled by diameter of polystyrene nanosphere as well as the etching time. A good antireflection and enhanced optical absorption characteristics have been observed in a wide spectral range, which is strongly dependent of the surface morphology. Particularly, by using the nanosphere with the diameter of 2000 nm, the reflection in the near-infrared spectral range (900–1500 nm), which cannot be efficiently utilized by Si, is suppressed and the corresponding optical absorption is enhanced significantly. The finite-difference time-domain simulation shows that, for the incident light with short wavelength, the light can only be absorbed at the surface range; but for the incident light with a long wavelength (1500 nm), the light can be efficiently absorbed in whole Ge nanostructures. Compared with the Ge nanostructure formed by using small-sized nanospheres (300 nm), the one formed by a large-sized nanosphere (2000 nm) shows the better optical absorption behaviors due to the strong Mie scattering effect.


       纳米球光刻技术已被用来获得锗纳米结构,以提高在近红外光区域的光吸收。作者证明了,通过调节聚苯乙烯纳米球的直径以及蚀刻时间可以很好地控制所形成的锗纳米结构的形貌。在广泛的光谱范围内观察到了良好的抗反射和光吸收增强的特性,这些特性与表面形态密切相关。特别是,通过使用直径为2000nm的纳米球,在Si不能有效利用的近红外光谱范围(900-1500nm)内的反射被抑制,并且相应的光吸收显著地增强。时域有限-差分法的模拟表明,对于短波长的入射光,光只能在表面范围内被吸收; 但对于长波长(1500nm)的入射光,光可以在整个Ge纳米结构中有效地被吸收。与使用小尺寸纳米球(300nm)形成的锗纳米结构相比,由大尺寸纳米球(2000nm)形成的锗纳米结构由于强烈的米氏散射效应而表现出更好的光吸收行为。



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