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由真空环境下输送到离子液体中CuCl气体源进行金属Cu的电沉积

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发表于 2018-5-24 11:34:14 | 显示全部楼层 |阅读模式
Electrodeposition of metallic Cu from CuCl gas source transported into ionic liquid in a vacuum
由真空环境下输送到离子液体中CuCl气体源进行金属Cu的电沉积
Journal of Vacuum Science & Technology A 36, 031516 (2018);

https://doi.org/10.1116/1.5019959

Yosuke Sato, Shingo Maruyama, and Yuji Matsumotoa)
Hide Affiliations
Department of Applied Chemistry, School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku Sendai, Miyagi 980-8579, Japan
a)Electronic mail: y-matsumoto@tohoku.ac.jp


ABSTRACT
摘要

The authors propose a new electrochemical process combined with vapor-phase deposition. In this process, an ionic liquid (IL) layer of ~20-μm thickness is used as the electrolyte and then coated on a patterned electrode substrate. The desired source material to electro-deposit is then introduced into the IL layer by vapor deposition in a vacuum under the control of applied electrode potential. In this work, the authors have demonstrated that metallic Cu was electrodeposited in IL by depositing CuCl from the gas phase. At negative electrode potentials versus Cu, CuCl was able to be reduced to metallic Cu, while CuCl remained as-deposited at positive electrode potentials versus Cu. The current density during the electrodeposition was found to strongly correlate with the vapor deposition rate of CuCl at an electrode potential of −0.7 V versus Cu. This suggests that the rate-limiting step in this overpotential region was the vapor deposition rate of CuCl. The rate could then be used to directly modulate the size and density of metallic Cu crystal grains.

        作者提出了一种与气相沉积相结合的新型电化学工艺。在该工艺过程中,约20-μm厚的离子液体(IL)层用作电解质,然后涂覆在图案化的电极基底上。然后在所施加的电极电位的控制下,在真空环境下通过气相沉积将所需的电沉积源材料引入到IL层中。在这项工作中作者证明了,由沉积气相的CuCl在IL中电沉积金属Cu。在相对于Cu的负电极电位下,CuCl能够被还原成金属Cu,而CuCl在相对于Cu的正电极电位下保持原样沉积。在相对于Cu的-0.7V的电极电位下,发现电沉积过程中的电流密度与CuCl的气相沉积速率密切相关。这表明,在该过电势区域中的限速步骤是CuCl的气相沉积速率。



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