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由射频溅射和等离子体增强原子层沉积制备Al2O3薄膜及其表征

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发表于 2018-5-9 09:22:43 | 显示全部楼层 |阅读模式
Preparation and characterization of Al2O3 film deposited by RF sputtering and plasma enhanced atomic layer deposition

由射频溅射和等离子体增强原子层沉积制备Al2O3薄膜及其表征

Journal of Vacuum Science & Technology B 36, 04G101 (2018);

https://doi.org/10.1116/1.5023591

Prashant Singha), Rajesh Kumar Jha, Rajat Kumar Singh, and Babu Ram Singh
Hide Affiliations
Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Allahabad 211015, Uttar Pradesh, India
a)Electronic mail: psingh3688@gmail.com

ABSTRACT
摘要

In this paper, the authors have investigated the structural and electrical properties of thin film of Al2O3 deposited by radio-frequency sputtering and plasma enhanced atomic layer deposition (PEALD) technique. Different deposition and process parameters for the sputtered and PEALD Al2O3 films were chosen to investigate their effect on the structural and electrical characteristics of the film. X-ray diffraction result shows the dominant peak of Al2O3 in both the cases at 2θ = 56° indicating (312) film orientation. Multiple angle analysis of sputtered and PEALD Al2O3 film shows a refractive index in the range of 1.70–1.74 and 1.65–1.69, respectively. Electrical characteristics indicate that the device fabricated by PEALD and annealed at 425 °C shows the positive flatband voltage of 3.5 V and improved leakage behavior as compared to the film deposited by sputtering.

        在本文中,作者研究了利用射频溅射和等离子体增强原子层沉积(PEALD)技术沉积的Al2O3薄膜的结构和电学性能。对于使用溅射和PEALD 技术制备Al2O3薄膜选择不同的沉积和工艺参数,来研究它们对薄膜的结构和电学特性的影响。两种制备技术下,X-射线衍射结果都显示在2θ = 56°处的Al2O3的主峰,并指示出(312)的薄膜取向。对使用溅射和PEALD 技术制备的Al2O3薄膜进行的多角度分析显示,其折射率分别在1.70-1.74和1.65-1.69之间。电学特性表明,由PEALD制备并且在425 °C下进行退火的器件显示出3.5V的正平带电压,与由溅射沉积的薄膜相比,其泄漏行为得到改善。


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