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直流磁控溅射制备顶栅GaN薄膜晶体管的研究

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发表于 2018-5-3 08:51:49 | 显示全部楼层 |阅读模式
Investigation of top gate GaN thin-film transistor fabricated by DC magnetron sputtering

直流磁控溅射制备顶栅GaN薄膜晶体管的研究

Journal of Vacuum Science & Technology B 36, 032203 (2018);

https://doi.org/10.1116/1.5021705

Rongsheng Chen
  School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China and State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong KongSunbin Deng
  State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong KongYuan Liua), Yurong Liu, and Bin Li
  School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaMan Wong and Hoi-Sing Kwok
  State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
more...Hide Affiliations
a)Author to whom correspondence should be addressed; electronic mail: liuyuan@ceprei.com

ABSTRACT
摘要

Top-gate thin-film transistors (TFTs) with an n-type GaN thin film active channel layer have been fabricated and characterized. At a substrate temperature of 550 °C, rather than room temperature, the GaN thin films deposited by the reactive direct current magnetron sputtering technique have an average grain size of 25 nm. Without high temperature postannealing process, the proposed GaN TFTs exhibit good electrical performance with a field effect mobility of 2.5 cm2/V s, a threshold voltage of 4.5 V, an on/off current ratio of 1.5 × 105, and a subthreshold swing of 0.7 V/decade. The proposed GaN thin film is promising for TFT active channel application in active-matrix display.

        制造并表征了带有n-型GaN薄膜有源沟道层的顶栅薄膜晶体管(TFT)。在衬底温度550℃而不是室温下,通过反应直流磁控溅射技术沉积的GaN薄膜具有25nm的平均晶粒尺寸。在没有高温退火工艺的情况下,所提出的GaN TFT显示良好的电性能,场效应迁移率为2.5 cm2/V s,阈值电压为4.5V,通/断电流比为1.5 × 105,亚阈值摆幅为0.7V /10年。这里所提出的GaN薄膜有望用作有源-矩阵显示器中的TFT有源沟道。


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