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低温-等离子体辅助循环合成制备MoS2

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发表于 2018-4-12 09:18:51 | 显示全部楼层 |阅读模式
Low-temperature, plasma assisted, cyclic synthesis of MoS2
低温-等离子体辅助循环合成制备MoS2

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 6, 031201 (2018);

https://doi.org/10.1116/1.5023202

Christopher J. Perinia) and Michael J. Muller
  Georgia Institute of Technology, School of Materials Science and Engineering, Marcus Nanotechnology Building, 345 Ferst Dr., Atlanta, Georgia 30318

ABSTRACT
摘要

Thin film reaction based synthesis techniques are promising for large area, uniform two-dimensional transition metal dichalcogenide (TMD) layers such as MoS2. In this work, the impact of the initial molybdenum film composition (metallic versus oxidized) is explored. Alternating steps of Mo sputtering and H2S soaks are used in conjunction with plasma assisted synthesis techniques to synthesize films at low temperatures. Raman, photoluminescence, x-ray photoelectron spectroscopy, and atomic force microscopy are used to physically characterize the films' atomic structure, stoichiometry, and topography, while devices were fabricated to characterize their electronic properties. MoS2 synthesized from metallic Mo films were found to exhibit better atomic and electronic structure than MoS2 synthesized from MoOx films. Additionally, slowing the rate of synthesis by segmenting growth into repeating cycles resulted in much higher film quality. To understand the impact of atomic structure and stoichiometry on device performance, films synthesized at low temperature were exposed to various high temperature annealing conditions to induce changes in film structure and composition. Physical and electrical characterization reveal that stoichiometry has a significantly weaker influence on electronic performance than grain size and atomic structure. These results provide valuable information on the optimization of low temperature thin film reactions for TMD syntheses.

        基于薄膜反应的合成技术有望用于大面积,均匀的二维过渡金属二硫属化物(TMD)薄膜如MoS2的制备。在本研究工作中,对初始钼膜组分的影响(金属与氧化)进行了探讨。使用Mo溅射和H2S浸泡的交替步骤并与等离子体辅助合成技术相结合,在低温条件下合成薄膜。拉曼谱,光致发光谱,X射线光电子能谱和原子力显微镜被用来在物理上表征薄膜的原子结构,化学计量和形貌,而制备的件则用来表征它们的电子特性。发现由Mo金属薄膜合成的MoS2具有比由MoOx薄膜合成的MoS2具有更好的原子和电子结构。另外,通过将生长过程分割成重复的循环来减慢合成速率会得到更高的薄膜质量。为了理解原子结构和化学计量对器件性能的影响,把低温合成的薄膜暴露于各种高温退火条件下,以引起薄膜结构和组分的变化。物理和电学表征显示,化学计量对电子性能的影响比晶粒尺寸和原子结构对电子性能的影响弱得多。这些结果为TMD合成的低温薄膜反应的优化提供了有价值的信息。



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