性别：男              出生年份： 1959年

职称：教授/博导  

简历（教育背景）

1982　复旦大学物理系电子物理专业学士学位
1992　日本东京工业大学电子物理专业硕士学位
1995　日本东京工业大学电子物理专业博士学位
1995　日本国立北陆先端科学技术大学院大学助教
1998- 复旦大学材料科学系副教授,教授

研究方向（包括任教课程）

薄膜物理与技术；透明电子学；氧化物薄膜晶体管；氧化物存储和传感材料

主讲课程：

纳米结构的检测与表征； 电子物理专业实验；透明电子学；材料科学与社会

学术任职

中国真空学会常务理事；中国真空学会副秘书长； 《无机材料学报》、《真空》和《真空科学与技术学报》学术期刊编委

近年代表性论文

    在国内外学术刊物APL, JAP, JJAP, JMR, JVSTA, Thin Solid Films和真空科学与技术等发表论文七十多篇，获国家发明专利8项，实用新型专利2项，受理专利4项。近五年发表的SCI学术论文：

1. Yu Chang, Zhao Yang, Haifeng Pu, Can Cui, Li Zhang, Chengyuan Dong, and Qun Zhang*, Solution-Processed Indium-Zinc-Oxide Thin-Flim Transistors with High-k Magnesium-Titanium Oxide Dielectric, IEEE ELECTRON DEVICE LETTERS, 2014, 35(5): 557-559

2. Lan Yue, HaiFeng Pu, HongLei Li, ShuJian Pang and Qun Zhang*, Dip-coated Al-In-Zn-O thin-film transistor with poly- methylmethacrylate gate dielectric, J. Phys. D: Appl. Phys. 46 (2013) 445106 (5pp)

3. Honglei Li, Mingyue Qu, and Qun Zhang*, Influence of Tungsten Doping on the Performance of Indium Zinc Oxide Thin Film Transistors, IEEE ELECTRON DEVICE LETTERS,2013, 34(10): 1268-1270

4. Haifeng Pu, Honglei Li, Zhao Yang, Qianfei Zhou, Chengyuan Dong, and Qun Zhang*, Effect of Content Ratio on Solution-Processed High-k Titanium-Aluminum Oxide Dielectric Films, ECS Solid State Letters, 2013, 2 (10): N35-N38.

5. Haifeng Pu, Qianfei Zhou, Lan Yue, Qun Zhang*, Investigation of oxygen plasma treatment on the device performanceof solution-processed a-IGZO thin film transistors, Applied Surface Science, 2013, 283: 722 – 726.

6. Haifeng Pu, Qianfei Zhou, Lan Yue and Qun Zhang*, Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing, Semicond. Sci. Technol. 28 (2013) 105002

7. Lan Yue, Hai-Feng Pu, Hong-Lei Li, Shu-Jian Pang, Qun Zhang*, Effect of active layer thickness on device performance of a-LZTO thin-film transistors, Superlattices and Microstructures, 2013, 57: 123-128

8. Yanwei Huang*, Qun Zhang, Junhua Xi, Zhenguo Ji, Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition, Applied Surface Science, 2012, 258: 7435-7439

9. Runlai Wan, Ming Yang, Qianfei Zhou, and Qun Zhang*, Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition,. J. Vac. Sci. Technol. A, 2012, 30(6), 061508-1-5

10. Ming Yang, Haifeng Pu, Qianfei Zhou, Qun Zhang*, Transparent p-type conducting K-doped NiO films deposited by pulsed plasma deposition, Thin Solid Films, 2012, 520, 5884-5888

11. Lan Yue, Haifeng Pu, Shujian Pang, Honglei Li and Qun Zhang*, Top-gate LZTO thin-film transistors with PMMA gate insulator by solution process, EPL, 97 (2012) 67006

12. Yao Qijun 1,2, Li Shuxin1 and Zhang Qun2, Study of Ti Addition in Channel Layers for In-Zn-O Thin Film Transistors, Applied Surface Science, 2011, 258: 1460-1463

13. Haifeng Pu, Guifeng Li, Jiahan Feng, Baoying Liu and Qun Zhang*, Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers, Semicond. Sci. Technol. 26 (2011) 095004

14. Qijun Yao, Shuxin Li and Qun Zhang*, Influences of channel metallic composition on indium zinc oxide thin-film transistor performance, Semicond. Sci. Technol. 26 (2011) 085011

15. Ming Yang, Zhan Shi, Jiahan Feng, Haifeng Pu, Guifeng Li, Jun Zhou, Qun Zhang*, Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition, Thin Solid Films, 2011, 519: 3021–3025

16. G.F. Li, J. Zhou, Y.W. Huang, M. Yang, J.H. Feng and Q. Zhang*, Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature, Vacuum, 2010, 85: 22-25

17. Yanwei Huang, Dezeng Li, Jiahan Feng, Guifeng Li and Qun Zhang*, Transparent conductive tungsten-doped tin oxide thin films synthesized by sol–gel technique on quartz glass substrates”, J Sol-Gel Sci Technol., (2010) 54: 276–281

18. Yanwei Huang, Guifeng Li, Jiahan Feng, Qun Zhang, “Investigation on structural, electrical and optical properties of tungsten-doped tin oxide thin films”, Thin Solid Films, 2010, 518: 1892-1896