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现代电子束-光刻工具中Z-坐标运动与高度校正硬件的场高校正的统计比较

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发表于 2018-10-11 08:36:26 | 显示全部楼层 |阅读模式
Statistical comparison of field height correction by Z-stage movement versus height-correction hardware in a modern electron-beam lithography tool
现代电子束-光刻工具中Z-坐标运动与高度校正硬件的场高校正的统计比较

Journal of Vacuum Science & Technology B 36, 06JA02 (2018);
https://doi.org/10.1116/1.5048117

Michael P. Younga)
Hide Affiliations
Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556
a)Electronic mail: mike.young@nd.edu

ABSTRACT
摘要

Modern electron-beam lithography tools are expected to operate within very tight specifications [S. Babin, S. Borisov, V. Militsin, T. Komagata, and T. Wakatsuki, Proc. Soc. Photo-Opt. Instrum. 9984, 998406 (2016)], in order to meet lithographic requirements for today’s and tomorrow’s cutting-edge electronic and photonic device fabrication. Specifications for linewidth fidelity, field stitching, and absolute feature placement accuracy demand the highest levels of performance. In this work, the performance of the hardware height compensation mechanism in a modern Gaussian-beam, vector-scan lithography tool is statistically compared with the use of the Z stage to correct for height on a field-by-field basis, in order to determine the method most likely to yield the best writing performance on a nonflat substrate. A test sample is prepared by writing an array of square marks on a 4 in. Si wafer.

Four marks per field are written, using the four corners of the writing field. After development, the wafer is coated with metal and the resulting marker array is formed via lift-off. The test wafer is then reloaded into the lithography tool. For each writing field, the positions of each of the four marks are found, with respect to the center of the field. The fields are visited in a spiral-out order, beginning near the center of the wafer. Location of the marks can be performed under two different conditions: fixed Z position with normal height compensation active or with Z position adjusted to bring the substrate to reference the height before locating marks in each field. No height compensation is used in the latter case. Subsequent statistical and graphical analysis of the collected data provides insight into the dynamics of the tool’s height correction capabilities and helps to inform the choice of Z-drive motion versus hardware height correction. In addition, should anomalies be observed, the analysis provides useful diagnostic information.


        现代电子束光刻工具有望在非常严格的规范下运行[S. Babin, S. Borisov, V. Militsin, T. Komagata, and T. Wakatsuki, Proc. Soc. Photo-Opt. Instrum. 9984, 998406 (2016)],以满足当今和未来最先进的电子和光子器件制造的光刻要求。线宽保真度,视场拼接和绝对特征定位精度的规范要求最高的技术性能水平。在本项工作中,现代高斯-光束,矢量-扫描光刻工具中硬件高度补偿机制的性能与使用基于逐场的Z-坐标台校正高度这两种方法在统计上进行了比较,以便确定最有可能在非平坦基板上产生最佳写入性能的方法。通过在4英寸Si晶片上写入正方形标记阵列来制备测试样品。使用写入区域的四个角,每个区域写入四个标记。在显影之后,用金属涂覆晶片,并通过剥离形成所得的标记阵列。然后将测试晶片重新放置到光刻工具中。对于每个写入区域,相对于区域的中心找到四个标记中的每一个的位置。标记的定位可以在两种不同的条件下进行:使用激活正常高度补偿来固定Z位置,或者使用经调整的Z位置,该调整使基板在每个区域中找到标记之前的参考高度。从晶片中心附近开始以螺旋旋出顺序探察区域。在后一种情况下不使用高度补偿。对收集到的数据进行的后续统计和图形分析可以深入了解该工具的高度校正功能的动态,并有助于选择针对硬件高度校正的Z-驱动器的运动。此外,如果发现异常,这项分析将提供有用的诊断信息。


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