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慢速高电荷离子辐照对金属氧化物半导体电容器的影响

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发表于 2018-8-1 15:33:24 | 显示全部楼层 |阅读模式
Effects of slow highly charged ion irradiation on metal oxide semiconductor capacitors
慢速高电荷离子辐照对金属氧化物半导体电容器的影响
Journal of Vacuum Science & Technology B 36, 052901 (2018);

https://doi.org/10.1116/1.5028149

Daniel B. Cutshall1,a), Dhruva D. Kulkarni2, James E. Harriss2, Daniel A. Field2, Chad E. Sosolik2, and William R. Harrell1
Hide Affiliations
1Department of Electrical and Computer Engineering, Clemson University, 433 Calhoun Dr, Clemson, South Carolina 29634
2Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29631
a)Electronic mail: dcutsha@g.clemson.edu

ABSTRACT
摘要

Measurements were performed to characterize and better understand the effects of slow highly charged ion (HCI) irradiation, a relatively unexplored form of radiation, on metal oxide semiconductor (MOS) devices.

Si samples with 50 nm SiO2 layers were irradiated with ion beams of ArQ+ (Q = 4, 8, and 11) at normal incidence. The effects of the irradiation were encapsulated with an array of Al contacts forming the MOS structure. High frequency capacitance–voltage (CV) measurements reveal that the HCI irradiation results in stretchout and shifting of the CV curve. These changes in the CV curve are attributed to dangling Si bond defects at the Si/SiO2 interface and trapped positive charge in the oxide, respectively. CV
Charge state dependencies have been observed for these effects with the CV curve stretchout having a dependence of Q~1.7 and the CV curve shifting with a dependence of Q~1.8.
These dependencies are similar to the results of previous studies focused on the Q-dependence of the stopping power of HCIs.

        所进行得测量是为了表征和更好地理解慢速高电荷离子(HCI)辐射,一种相对来说未探索的辐射形式,对金属氧化物半导体(MOS)器件的影响。采用法向入射的ArQ+离子束(Q = 4、8和11)照射具有50nm厚度的 SiO2层的Si样品。照射的效果用形成MOS结构的Al触点阵列封装。高频电容 - 电压(CV)测量显示HCI辐射导致CV曲线的拉伸和移位。曲线的这些变化可分别归因于Si/SiO2界面处的悬挂Si键的缺陷和氧化物中的正电荷捕获。已经观察到这些效应的电荷状态依赖性,其中CV曲线伸展具有Q~1.7的依赖性,而CV曲线移位具有Q~1.8的依赖性。这些依赖性类似于先前研究的结果,这些研究集中于HCI的阻止能力的Q-依赖性。


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