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使用Cl2和乙酰丙酮对Fe薄膜进行原子层刻蚀的原位XPS研究

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发表于 2018-7-27 11:11:46 | 显示全部楼层 |阅读模式
In situ XPS study on atomic layer etching of Fe thin film using Cl2 and acetylacetone
Journal of Vacuum Science & Technology A 36, 051401 (2018);

使用Cl2和乙酰丙酮对Fe薄膜进行原子层刻蚀的原位XPS研究

https://doi.org/10.1116/1.5039517

Xi Lin1, Meixi Chen1, Anderson Janotti2, and Robert Opila1,2,a)
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1Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716
2Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716
a)Electronic mail: opila@udel.edu

ABSTRACT
摘要

Etching of transition metals is one of the major challenges in magnetic random-access memory fabrication. In this work, atomic layer etching of iron surfaces with halogen and an organic molecule was studied. The authors successfully etched Fe thin films by forming volatile metal complexes at low temperature with cyclic reactions of Cl2 and acetylacetone (acac). The mechanism of acac reacting on Cl-modified Fe surface was investigated: the surface was first activated with Cl2 gas, and then the top layer of metal was removed by acac reaction. The extent of Cl2 reaction determined the etching rate. At substrate temperatures lower than 135 °C, acac could not remove chlorine. In situ x-ray photoelectron spectroscopy and density functional theory simulation show that the reaction of acac on Cl-dosed Fe surface is likely following a complex pathway instead of simple acac substitution for Cl2. Acac decomposition may play an important role in the process.

        过渡金属的蚀刻是磁随机存取存储器制造中的主要挑战之一。在本工作中,研究了使用卤素和有机分子对铁表面进行原子层蚀刻。作者通过在低温下借助Cl2和乙酰丙酮(acac)的循环反应形成挥发性金属络合物,成功地蚀刻了Fe薄膜。研究了Acac在Cl -改性Fe表面反应的机理:首先用Cl2气体活化表面,然后通过acac反应除去金属顶层。Cl2反应的程度决定了蚀刻速率。 在低于135 °C的基板温度下,acac无法去除氯。原位X-射线光电子能谱和密度泛函理论模拟表明,acac在Cl-渗入Fe表面上的反应可能遵循复杂途径,而不是简单的acac取代Cl2。Acac分解可能在该过程中起重要作用。


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